串行 PCM

串行 PCM

用于简化设计的串行 PCM

我们的相变存储器 (PCM) 是具备简单串行接口的单个非易失性设备,集传统内存技术的最佳特性于一身。P5Q 产品是高密度 SPI 架构的理想选择,其能够简化设计、提升系统性能,并能为各种应用实现功能扩展。

tunnel适应现在与未来需求的串行解决方案

是否存在一种单一存储技术能够满足您在嵌入式应用中的所有需求,同时具备设计简单并便于插入的串行接口?是。

P5Q PCM 的设计初衷便是为了满足嵌入式系统的存储要求,它使用常用的 SPI NOR 接口实现了多 I/O 功能和兼容性。P5Q 提升了系统的整体性能,使用字节可变更性(覆写功能)达到简化软件的目的。1 百万次的写周期使用寿命(与 NOR 闪存的 100,000 次比较)还让整个系统的可靠性得以增加。

串行 PCM 料件目录和文档

Serial PCM Design Resources

Great design resources are available to help you get the most out of your PCM solution.

为什么要买美光的 PCM?
PCM 产品以美光在半导体设计与制造行业 30 年的行业领先技术与创新能力为支撑。您将获得长期存储解决方案和长期合作存储提供商 — 美光所带来的稳定性、灵活性、支持与可用性,满足您对品质与功能的期望。

我们不仅拥有您需要的解决方案,而且我们还会帮助您充分利用相关技术,提供包括全面的数据表到省时仿真模型等在内的丰富资源。请参阅我们的技术资源进行 DIY 设计,或者在您的大众市场项目上遇到特殊挑战时,与我们当地的现场应用工程师 (FAE) 合作解决问题。我们想要为您提供一切能让您的设计更快、更便捷、更成功地进入市场所需的产品和服务。

特点 优势
Densities:32-128Mb Supports growing high density embedded serial market

I/O bus width:quad (single/dual supported)

  • 66 MHz (maximum) single/dual I/O
  • 50 MHz (maximum) quad I/O 
High performance to match leading-edge serial NOR
Package:SOIC-16 Standard SPI package
Programming time:0.9MB/sec. Up to 3x improvement vs. 65nm SPI NOR
Byte-alterable Improves system performance by not having to perform erase operations
耐用性:1,000,000 cycles Reduces system and software management.Ideal for write intensive applications
Single supply voltage:2.7 - 3.6V Supports full 3.3V voltage range
Temperature range:-40ºC to +85º & 0ºC to +70º Supports industrial or commercial temperature for a wide variety of embedded applications

White Paper:PCM and Memory Usage Models

Learn how PCM meets the needs of growing application requirements with our white paper, Phase Change Memory (PCM):A new memory technology to enable new memory usage models.The paper discusses scalability and examines PCM in computing, embedded, and wireless systems.

Download Whitepaper

类型 安全 标题和描述 编号 更新日期 文件大小
Thermal Applications: 定义了测量和确保美光零件和模块不超过允许的最高温度的一般方法和标准 TN-00-08 2010/05 252.18 KB
PCN/EOL Systems: 介绍了美光产品的变更通知和寿命终结系统。 CSN-12 2012/04 79.21 KB
Wafer Packaging and Packaging Materials: 提供了有关装运美光产品时使用的各种材料的完整装运和回收信息。 CSN-20 2011/09 776.24 KB
Bare Die SiPs and MCMs: 描述了 Bare Die SiP 和 MCM 的设计考虑因素。 CSN-18 2009/04 151.06 KB
Shipping Quantities: 提供了料件数量表格。 CSN-04 2012/04 472.27 KB
Micron KGD Definitions: 描述了美光 KGD-C1 和 KGD-C2 DRAM 芯片的测试规格和参数 CSN-22 2009/07 65.52 KB
Micron Component and Module Packaging: 解释了美光的封装标签和程序。 CSN-16 2012/02 887.13 KB
ESD Precautions for Die/Wafer Handling and Assembly: 介绍了在工作场所中控制 ESD 的好处,包括提高产量和改善质量与可靠性,最终可以缩减制造成本。 CSN-24 2010/08 119.08 KB
Electronic Data Interchange: 描述了 EDI 传输的装置、协议和联系方式。 CSN-06 2005/09 53.5 KB
RMA Procedures for Packaged Product and Bare Die Devices: 概括介绍了标准的退货授权 (RMA) 程序,以及与 bare die RMA 的对比。 CSN-07 2010/10 82.64 KB
ISO System Management Standards: 描述了 ISO 系统管理标准。 CSN-08 2004/04 39.18 KB
Moisture Absorption in Plastic Packages: Describes shipping procedures for preventing memory devices from absorbing moisture and recommendations for baking devices exposed to excessive moisture TN-00-01 2010/02 87.26 KB
Accelerate Design Cycles with Simulation Models: 美光会提供必要的工具和指导,以在实际布局前对新设计进行检验。此技术要点讨论了软件模型支持、信号保真性优化和逻辑电路设计。 TN-00-09 2010/02 206.91 KB
The Evolution of Phase Change Memory: Describes how PCM has evolved and is the next generation of nonvolatile memory. White Paper 2011/03 591.74 KB
Comparing P5Q Serial PCM and NOR Flash SPI Memory: Comparing the features of the 128Mb P5Q serial PCM and NOR Flash SPI memory devices enables users to migrate applications from NOR Flash memory to P5Q serial PCM memory. AN310052 2011/11 146.41 KB
Micron PCM Innovates System Designs for Smart Grid Products: A Micron/Singhang case study highlighting the memory system design challenges Singhang had with their smart grid product and how they worked with Micron to implement a superior, single-chip memory solution. 案例研究 2011/05 1.17 MB
PCM:A New Memory Technology to Enable New Memory Usage Models: Describes how PCM blends together the best attributes of NOR Flash, NAND Flash, EEPROM, and RAM to deliver a new category of memory for new usage models White Paper 2011/06 297.2 KB
Micron BGA Manufacturer's User Guide: 提供相关信息,帮助顾客轻松将最前沿的和传统的美光球栅阵列 (BGA) 封装整合到制造流程中。此指南旨在提供一系列高水平指导,并附有参考手册,其中介绍了封装相关和制造工艺流程的典型做法。 CSN-33 2011/07 353.32 KB
Product Marks/Product and Packaging Labels: 介绍了产品料件的标记,以及产品和封装的标签。 CSN-11 2012/04 724.89 KB
Flash Data Integrator (FDI) File System Flyer: Running on Micron's latest NOR Flash and phase change memory (PCM), our Flash Data Integrator (FDI) file system provides dependable storage to create a compelling, low-cost solution.In addition, FDI delivers a true eXecute-in-Place (XiP) advantage in an open architecture to manage code and data in NOR and PCM memory devices. 产品宣传页 2011/09 673.02 KB
Industrial and Multi-Market Applications Flyer: 我们拥有广泛而稳定的 IMM 式存储解决方案,有助于推动汽车、工业、医疗、制造业和其它多类细分市场的技术发展。 产品宣传页 2011/08 593.95 KB
Compatibility Guide for Micron Software Device Drivers Available on micron.com: This document lists the compatible NOR, NAND, and PCM devices for the software device drivers available for download from micron.com. 产品宣传页 2012/02 227.69 KB
P5Q (128Mb): PCM software driver 2009/12 17.92 KB
Micron Phase Change Memory for Embedded Applications: PCM is revolutionary memory that merges the best attributes of NOR, NAND, and RAM, offering unprecedented capability in a single, nonvolatile memory chip. 产品宣传页 2012/01 2.19 MB
Software Device Drivers for the Micron P5Q PCM Device: This technical note describes the C library source code for the Micron P5Q phase change memory (PCM) device using the Micron software device driver. TN-13-04 2011/03 302.12 KB
Extending PCM Temperature and Data Retention Ranges:Software Refresh Procedure: This technical note describes a software procedure for refreshing data in Micron® P5Q serial phase change memory (PCM) and P8P parallel PCM devices to enable usage beyond current data sheet specifications. TN-13-07 2011/06 540.15 KB
Extending 90nm PCM Endurance from 1 Million WRITE Cycles Up to 1 Billion Cycles: This technical note outlines a software solution called the parameter manager, which is used to increase the WRITE cycles for Micron's phase change memory (PCM) well beyond its standard endurance specifications. TN-13-09 2011/11 441.71 KB

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