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Thermal Applications: 定义了测量和确保美光零件和模块不超过允许的最高温度的一般方法和标准
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TN-00-08
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2010/05
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252.18 KB
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技术要点
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Recommended Soldering Parameters: 定义了美光科技公司产品的推荐连接技术和参数。
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TN-00-15
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2007/03
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69.09 KB
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技术要点
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Uprating of Semiconductors for High-Temperature Applications: 描述了与提升温度有关的问题,以及在制造环境规范之外使用零件和/或系统的相关风险
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TN-00-18
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2010/05
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428.33 KB
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技术要点
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Understanding Signal Integrity: 描述了从新产品构思直至产品寿命结束的整个过程中,如何发挥内存设计、测试和验证工具的最大优势
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TN-00-20
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2009/12
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1.52 MB
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技术要点
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PCN/EOL Systems: 介绍了美光产品的变更通知和寿命终结系统。
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CSN-12
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2012/04
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79.21 KB
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客服要点
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Wafer Packaging and Packaging Materials: 提供了有关装运美光产品时使用的各种材料的完整装运和回收信息。
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CSN-20
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2011/09
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776.24 KB
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客服要点
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Bare Die SiPs and MCMs: 描述了 Bare Die SiP 和 MCM 的设计考虑因素。
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CSN-18
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2009/04
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151.06 KB
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客服要点
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Shipping Quantities: 提供了料件数量表格。
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CSN-04
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2012/04
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472.27 KB
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客服要点
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Micron KGD Definitions: 描述了美光 KGD-C1 和 KGD-C2 DRAM 芯片的测试规格和参数
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CSN-22
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2009/07
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65.52 KB
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客服要点
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Micron Component and Module Packaging: 解释了美光的封装标签和程序。
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CSN-16
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2012/02
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887.13 KB
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客服要点
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ESD Precautions for Die/Wafer Handling and Assembly: 介绍了在工作场所中控制 ESD 的好处,包括提高产量和改善质量与可靠性,最终可以缩减制造成本。
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CSN-24
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2010/08
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119.08 KB
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客服要点
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Electronic Data Interchange: 描述了 EDI 传输的装置、协议和联系方式。
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CSN-06
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2005/09
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53.5 KB
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客服要点
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RMA Procedures for Packaged Product and Bare Die Devices: 概括介绍了标准的退货授权 (RMA) 程序,以及与 bare die RMA 的对比。
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CSN-07
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2010/10
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82.64 KB
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客服要点
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ISO System Management Standards: 描述了 ISO 系统管理标准。
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CSN-08
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2004/04
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39.18 KB
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客服要点
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Moisture Absorption in Plastic Packages: Describes shipping procedures for preventing memory devices from absorbing moisture and recommendations for baking devices exposed to excessive moisture
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TN-00-01
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2010/02
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87.26 KB
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技术要点
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Accelerate Design Cycles with Simulation Models: 美光会提供必要的工具和指导,以在实际布局前对新设计进行检验。此技术要点讨论了软件模型支持、信号保真性优化和逻辑电路设计。
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TN-00-09
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2010/02
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206.91 KB
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技术要点
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Numonyx Flash Memory Programming Algorithm Optimizations: This application note suggests methods to help you optimize your programming algorithms for quicker Numonyx Flash Memory programming times.
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AN-759
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2010/10
|
38.1 KB
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技术要点
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Migration Guide for Numonyx Wireless Flash Memory (W18) to Numonyx StrataFlash Wireless Memory (L18): This application note describes the process for migrating from the Numonyx Wireless Flash Memory device (W18/W30) to the Numonyx StrataFlash wireless memory device (L18/L30).
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AN-753
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2010/10
|
348.08 KB
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技术要点
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Schematic Review Checklist for Numonyx StrataFlash Wireless Memory (L18/L30) and Numonyx Wireless Flash Memory (W18/W30): This document provides hardware design information for system designers using the Numonyx StrataFlash Wireless Memory (L18/L30) and the Numonyx Wireless Flash Memory (W18/W30) devices.
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AN-783
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2010/10
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181.58 KB
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技术要点
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Introduction to On-Board Programming with Numonyx Flash Memory: This application note describes the strengths, limitations, programming methods, and design considerations for on-board programming of NOR Flash memory devices.
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AN-624
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2010/11
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87.42 KB
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技术要点
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Simplify Manufacturing by Using Automatic-Test-Equipment for On-Board Programming: This document describes using automatic-test-equipment (ATE) to program Numonyx NOR Flash memory components on a PCB.
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AN-629
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2010/11
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440.67 KB
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技术要点
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Designing for On-Board Programming Using the IEEE 1,149.1 (JTAG) Access Port: This document provides information on an alternative on-board programming method for small form factor PCB applications using the Joint Test Action Group Test Access Port (JTAG TAP) to perform OBP.
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AN-630
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2010/11
|
81.75 KB
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技术要点
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Designing for Successful Flash Memory Read and Verify Operations: This document provides hardware and software techniques to eliminate read and verify problems caused by VCC and GND transient voltage spikes.
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AN-679
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2010/12
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79.54 KB
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技术要点
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Reduce Manufacturing Costs with Numonyx Flash Memory Enhanced Factory Programming: This application note explores EFP benefits, limitations, technical concepts and shares empirical data comparing EFP on various programming systems.
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AN-738
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2010/11
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77.04 KB
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技术要点
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Improving Programming Throughput of Automated Flash Memories: Provides concepts that can be employed to accelerate programming of write-automated flash memories in manual/automated device programmers, ATE, JTAG/HSS implementations, and in-system write applications.
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AN-678
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2010/11
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534.29 KB
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技术要点
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Numonyx StrataFlash Memory J3A to J3C Migration Guide: This document provides a seamless migration path from the Numonyx StrataFlash memory (J3A) device to the Numonyx StrataFlash memory (J3C) device.
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AN-792
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2010/11
|
83.5 KB
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技术要点
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Numonyx StrataFlash Wireless Memory (L30) to Intel PXA255 Processor Design Guide: This application note provides information about interfacing the Numonyx StrataFlash Wireless Flash Memory (L30) device to the Intel PXA250 Applications Processor, including some general concepts about interfacing to the integrated features and control signals of the L30 device.
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AN-805
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2010/11
|
277.05 KB
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技术要点
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Numonyx StrataFlash Wireless Memory (L18) to Intel PXA270 Processor Design Guide: This application note describes interfacing the Numonyx StrataFlash Wireless Memory (L18) to the Intel PXA27x Processor, and discusses some general concepts involved when interfacing to the integrated features and control signals of the L18.
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AN-806
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2010/11
|
297.29 KB
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技术要点
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Migration Guide for Numonyx Wireless Flash Memory (W18, 130nm) to Numonyx Wireless Flash Memory (W18, 90nm): This application note describes migrating from the Numonyx Wireless Flash Memory (W18 130 nm) device to the Numonyx Wireless Flash Memory (W18 90 nm) device.
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AN-826
|
2010/11
|
312.22 KB
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技术要点
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Conversion Guide:Numonyx Embedded Flash Memory (32, 64, and 128 Mbit) J3 v.D to J3 65nm: This document provides information to assist customer conversion from the Numonyx Embedded Memory (J3 v.D) to Numonyx Embedded Memory (J3 65nm) Single Bit per Cell (SBC) device, including a description of key hardware and software differences.
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AN-308038
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2010/11
|
200.03 KB
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技术要点
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How to Migrate Numonyx Axcell M29EW (SBC) from Spansion S29GL Flash (32, 64-, and 128 Mbit): This application note describes how to convert a system design from Spansion S29GL (including P series and N series) Flash to Numonyx Axcell M29EW (SBC) Flash.
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AN-309014
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2010/11
|
373.68 KB
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技术要点
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Conversion Guide:Numonyx Axcell Flash Memory P33 Stack 256 Mbit/256Mbit (130nm) to 512 Mbit Monolithic (65nm): This application note describes the migration from the Numonyx Axcell Flash Memory P33 256 Mbit/256 Mbit 130nm device to the Numonyx Axcell Flash Memory P33 512 Mbit monolithic 65nm device.
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AN-309015
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2010/11
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391.6 KB
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技术要点
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Conversion Guide:Numonyx Axcell P30 Flash Memory (128 Mbit, 64 Mbit) 130nm to 65nm (Single Bit per Cell): This application note describes the migration from the Numonyx Axcell P30-130nm flash memory to the Numonyx Axcell P30-65nm (SBC) flash memory.
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AN-309042
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2010/11
|
252.4 KB
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技术要点
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Conversion Guide:Numonyx Axcell P33 Flash Memory (128 Mbit, 64 Mbit) 130nm to 65nm SBC: This application note describes the migration from the Numonyx Axcell P33-130nm flash memory to the Numonyx Axcell P33-65nm (SBC) flash memory.
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AN-309043
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2010/11
|
251.17 KB
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技术要点
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Convesion Guide:Numonyx Axcell Flash Memory P30 Stack 256 Mbit/256 Mbit (130nm) to 512 Mbit Monolithic (65nm): This application note describes the migration from the Numonyx Axcell Flash Memory P30 256-Mbit/256-Mbit 130nm device to the Numonyx Axcell Flash Memory P30 512-Mbit monolithic 65nm device.
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AN-309044
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2010/11
|
406.12 KB
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技术要点
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How to operate Power Loss Recovery for the Numonyx 65nm Flash Memory Devices: This application note describes guidelines on the operations a system designer must perform to recover the flash memory if power loss occurs during a modify operation on the main array of a Numonyx 65nm flash memory device.
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AN-309046
|
2010/11
|
61.37 KB
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技术要点
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Migration Guide for Numonyx StrataFlash Wireless Memory (L18/L30) to Numonyx StrataFlash Embedded Memory (P30): This application note describes migrating from the Numony StrataFlash Wireless Memory (L18/L30) to the Numonyx StrataFlash Embedded Memory (P30).
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AN-840
|
2010/11
|
216.05 KB
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技术要点
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Numonyx StrataFlash Cellular Memory to ARM Primecell Design Guide: This application note describes interfacing Numonyx StrataFlash Cellular Memory (M18 SCSP) to Advanced RISC Machines Limited (ARM) PrimeCell Synchronous Static Memory Controller (SSMC-PL093) and Multi-Port Memory Controller (MPMC-PL172).Also discusses the integrated features and control signals for interfacing the M18 flash memory and LPSDRAM to the SSMC and MPMC, respectively.
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AN-841
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2010/11
|
465.39 KB
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技术要点
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Migration Guide:Numonyx StrataFlash Synchronous Memory (K3) to Numonyx Embedded Flash Memory (J3 v.D): This document describes the migration from the Numonyx StrataFlash Synchronous Memory (K3) to Numonyx Embedded Flash Memory (J3 v.D).
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AN-846
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2010/11
|
227.93 KB
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技术要点
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Migration Guide for Numonyx StrataFlash Wireless Memory (L18) to Numonyx StrataFlash Cellular Memory (M18): This application note provides guidance for designing with Numonyx StrataFlash Wireless Memory (L18), pre-enabling a hardware design to support Numonyx StrataFlash Cellular Memory (M18).
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AN-822
|
2010/11
|
303.86 KB
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技术要点
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Migration Guide:Numonyx StrataFlash Embedded Memory (P30) to Numonyx StrataFlash Embedded Memory (P33): This document provides migration guidelines to convert system designs from the Numonyx StrataFlash Embedded Memory (P30) device to the Numonyx StrataFlash Embedded Memory (P33) device.
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AN-867
|
2010/11
|
104.79 KB
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技术要点
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Migration Guide for Numonyx StrataFlash Cellular Memory (M18), 90nm to 65nm: This application note describes technical requirements to migrate from the Numonyx StrataFlash Cellular Memory (M18), 512 Mbit 90 nm device to the Numonyx StrataFlash Cellular Memory (M18), 1 Gbit 65nm device.It also highlights key differences and similarities between the 512 Mbit and 1 Gbit devices.
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AN-860
|
2010/11
|
163.5 KB
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技术要点
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Migration Guide Intel W18-130/90nm to ST WR-65nm: This application note describes migrating from the Intel Wireless Flash Memory (W18 130nm and 90nm) device to the ST Wireless Flash Memory (WR 65nm) device.
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AN-907
|
2010/11
|
93.66 KB
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技术要点
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Conversion Guide:Numonyx Axcell Flash Memory P30 (256 Mbit, 256 Mbit/256 Mbit) 130nm to 65nm: This application note describes the migration from the Numonyx Axcell Flash Memory (P30-65nm) device to the Numonyx Axcell Flash Memory (P30-130nm) device.
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AN-908
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2010/11
|
389.19 KB
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技术要点
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Conversion Guide:Numonyx Axcell Embedded Memory P33 (256 Mbit, 256 Mbit/256 Mbit) 130nm to 65nm: This application note describes the migration from the Numonyx Axcell Flash Memory (P33-130nm) device to the Numonyx Axcell Flash Memory (P33-65nm) device.
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AN-909
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2010/11
|
381.62 KB
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技术要点
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Connecting a MPC56x Microcontroller to the M58BW016B/D Flash Memory: This application note describes a method of connecting the M58BW016B/D Flash Memory to a MPC56x microcontroller without using glue logic.
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AN-1360
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2010/11
|
244.7 KB
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技术要点
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Differences between the M29W320DB/T and the M29W320EB/T Flash Memories: This application note describes the differences between the M29W320D and the M29W320E Flash memories.
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AN-2308
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2010/11
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436.72 KB
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技术要点
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How to Migrate to Numonyx Axcell M29EW (MLC) from Spansion Flash (S29GL 256 Mbit, 512 Mbit, 1 Gbit and S70GL 2 Gbit): This application note describes how to convert a system design from Spansion S29GL (including P series and N series) and S70GL-P Flash to Numonyx Axcell M29EW (MLC) Flash.
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AN-108109
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2010/11
|
312.7 KB
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技术要点
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Migration Guide for Numonyx Advanced+ Boot Block Flash Memory (C3) to Numonyx Industry Standard Boot Block Flash Memory (M28W): This document describes how to migrate from the Numonyx Advanced+ Boot Block Flash Memory (C3) 130nm device to the Numonyx Industry Standard Boot Block Flash Memory (M28W).
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AN-915
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2010/11
|
194.27 KB
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技术要点
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How to Migrate from the M58BW016DT/B to the M58BW016FT/B Flash Memories : This Application note describes how to use the M58BW016FT/B in applications based on the M58BW016DT/B Flash memories.
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AN-2461
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2010/11
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186.06 KB
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技术要点
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How to Power On and Power Off M58BW16F/32F and M58BW016D/F Flash Memories: This application note describes how to power-on and power-off the M58BW16F/32F and M58BW016D/F Flash memory devices.
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AN-2601
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2010/11
|
294.09 KB
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技术要点
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How to Migrate from M29W128FH/L to M29W128GH/L Flash Memories : This application note explains how to migrate an application based on the M29W128FH/L Flash memory to an M29W128GH/L Flash memory.
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AN-2663
|
2010/11
|
570.36 KB
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技术要点
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How to Migrate from S29GL128P to M29W128GH/L Flash Memories: This application note explains how to migrate an application based on the S29GL128P Flash memory to an M29W128GH/L Flash memory.
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AN-2685
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2010/11
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429.08 KB
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技术要点
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Migrating from L30 Devices to LT Devices: This document lists the differences between devices belonging to the L30 65nm technology family made by Intel and the LT 65nm technology family made by ST.
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AN-2721
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2010/11
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275.81 KB
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技术要点
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Migrating from the M30L0T8000x2 to the M58LT256KTB: This application note provides information about the differences between the M30L0T8000x2 (90nm) device and the M58LT256KTB (65nm) device that could have an impact on their application and usage.
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AN-3000
|
2010/11
|
265.89 KB
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技术要点
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Migrating from the L18 Family in 130nm Technology to the LR Family in 65nm Technology: This application note provides information about the differences between the L18 device family in 130nm and the LR device family in 65nm.This information is important for migrating from L18 devices to LR devices.
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AN-3003
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2010/11
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230.69 KB
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技术要点
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Migrating from the Winbond 16-Mbit 1.8V Device to the M69KM024A: This application note compares the specifications of the Winbond 16-Mbit, 1.8V device to the M69KM024A device for the purpose of migrating from one device to the other.
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AN-3004
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2010/11
|
152.85 KB
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技术要点
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Migration Guide:Numonyx M29W128G Flash to Numonyx 28F256M29EW Flash: This application note describes how to upgrade a system design from Numonyx 128 Mbit M29W128G Flash to Numonyx 256 Mbit 28F256M29EW Flash.
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AN-308003
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2010/11
|
480.76 KB
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技术要点
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Conversion Guide:Numonyx StrataFlash Memory (J3C) to Numonyx Embedded Flash Memory (J3 v.D): This document describes how to convert a system design from the Numonyx StrataFlash Memory (J3) device to the Numonyx StrataFlash Embedded Memory (J3 v.D) device.
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AN-835
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2010/11
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39.23 KB
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技术要点
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How to Migrate to Numonyx M29W400D from Spansion S29AL004D Flash Memory : This application note explains how to migrate an application based on the Spansion S29AL004D Flash memory device to an application based on the Numonyx M29W400D Flash memory device.
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AN-309005
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2010/11
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174.15 KB
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技术要点
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How to Migrate to Numonyx M29W800D from Spansion S29AL008J/D Flash Memory: This application note explains how to migrate an application based on the Spansion 1S29AL008D/J Flash memory device to an application based on the Numonyx M29W800D Flash memory device.
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AN-309006
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2010/11
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181.4 KB
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技术要点
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How to Migrate to Numonyx M29W160E from Spansion S29AL016D/J/M and S29GL016A Flash Memory: This application note explains how to migrate an application based on the Spansion S29AL016D/J or the S29GL016A Flash memory devices to an application based on the Numonyx M29W160E Flash memory device.
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AN-309007
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2010/11
|
189.33 KB
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技术要点
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How to Migrate to Numonyx M29W640G from Spansion S29GL064N Flash Memory: This application note explains how to migrate an application based on the S29GL064N Flash memory to an M29W640G Flash memory.
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AN-309009
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2010/11
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242.74 KB
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技术要点
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How to Migrate to Numonyx M29W320E from Spansion S29GL032N Flash Memory: This application note explains how to migrate an application based on the S29GL032N Flash memory to an M29W320E Flash memory.
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AN-309010
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2010/11
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232.69 KB
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技术要点
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How to Power On and Power Off the Numonyx Axcell M29F Flash Memory Device: This application note provides guidelines for providing power to and removing power from the Numonyx Axcell M29F Flash memory device.
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AN-309016
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2010/11
|
312.48 KB
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技术要点
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How to Migrate to the Numonyx M29F family from the Spansion Am29F Family Flash Memory: This application note explains how to migrate an application based on the Spansion Am29F200B, Am29F400B, Am29F800B, and Am29F160D Flash memory devices to an application based on the Numonyx M29F family Flash memory devices.
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AN-309017
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2010/11
|
147.82 KB
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技术要点
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Spansion S29NS/WS-R to Numonyx StrataFlash Cellular Memory M Family Migration Guide: This application note provides guidance for migrating from a system designed with a Spansion S29NS/WS-R Flash memory device to Numonyx StrataFlash Cellular Memory M family device, while retaining the Spansion layout.
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AN-309204
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2010/11
|
113.97 KB
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技术要点
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Spansion Flash Memory to Numonyx StrataFlash Wireless Memory (L) Migration Guide: This application note provides information about migrating from a Spansion to a Numonyx L Flash memory device.
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AN-309205
|
2010/11
|
76.99 KB
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技术要点
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How to Migrate from M29DW128FH/L to M29DW128GH/L Flash Memories: This application note explains how to migrate an application based on the M29DW128FH/L Flash memory to an M29DW128GH/L Flash memory.
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AN-3102
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2010/11
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432.52 KB
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技术要点
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Conversion Guide:Numonyx StrataFlash Wireless Memory (L18) 130nm to 65nm: This application note describes converting from the Numonyx StrataFlash Wireless Memory (L18 130nm) to the Numonyx StrataFlash Wireless Memory (L18 65nm).
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AN-903
|
2010/11
|
178.17 KB
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技术要点
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Conversion Guide:Numonyx Embedded Flash Memory J3 (128/128 Mbit Stacked to 256 Mbit Monolithic) 130nm to 65nm: This document is written to assist customer conversion from Numonyx Embedded Flash Memory (J3 v.D) 128/128 Mbit stack to Numonyx StrataFlash Embedded Memory (J3-65nm) 256-Mbit Monolithic version on 65nm lithography, including explanation of key hardware and software differences.
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AN-308040
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2010/11
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141.3 KB
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技术要点
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Conversion Guide (256-Mbit):Numonyx Embedded Flash Memory (J3 v.D, 130 nm) to Numonyx StrataFlash Embedded Memory (J3, 65nm) : This document describes the conversion from Numonyx Embedded Flash Memory (J3 v.D) to Numonyx StrataFlash Embedded Memory (J3-65 nm) on 65nm lithography, including an explanation of key hardware and software differences.
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AN-308041
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2010/11
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218.11 KB
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技术要点
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Verilog Behavioral Model for M29W160EB/T Flash Memory: This document describes the Verilog behavioral model for M29W160EB and M29W160ET Flash memory devices.
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UG-409020
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2010/11
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94.7 KB
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技术要点
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Micron Wire-Bonding Techniques: 此技术要点提供了丝焊技术的指导,可用于美光产品的镍钯 (NiPd) 和铝制接合焊盘。
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TN-00-22
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2010/11
|
66.13 KB
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技术要点
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Lead Frame Package User Guidelines: Discusses Micron's lead-frame package options
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CSN-30
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2011/05
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245.66 KB
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客服要点
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TN-12-01:Migrating S29GL to M29AW NOR Flash Devices: This technical note describes the process for converting a system design using Spansion® S29GL (all series) devices to Micron® M29AW multilevel cell (MLC) NOR Flash devices.
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TN-12-01
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2011/06
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242.08 KB
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Micron BGA Manufacturer's User Guide: 提供相关信息,帮助顾客轻松将最前沿的和传统的美光球栅阵列 (BGA) 封装整合到制造流程中。此指南旨在提供一系列高水平指导,并附有参考手册,其中介绍了封装相关和制造工艺流程的典型做法。
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CSN-33
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2011/07
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353.32 KB
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How to migrate to M29W256G Flash memories from S29GL256P : The objective of this application note is to explain how to migrate an application based on the S29GL256P Flash memory to an M29W256GH/L Flash memory.The purpose of this document is not to provide detailed information on the devices, but to highlight the similarities and differences between them.
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AN-309018
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2011/09
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620.22 KB
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技术要点
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Product Marks/Product and Packaging Labels: 介绍了产品料件的标记,以及产品和封装的标签。
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CSN-11
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2012/04
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724.89 KB
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Enhanced Flash Driver (EFD) 2.2 User Guide: This document describes the API and structures associated with the Enhanced Flash Driver 2.2.
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2010/11
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791.82 KB
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Flash Data Integrator (FDI) File System Flyer: Running on Micron's latest NOR Flash and phase change memory (PCM), our Flash Data Integrator (FDI) file system provides dependable storage to create a compelling, low-cost solution.In addition, FDI delivers a true eXecute-in-Place (XiP) advantage in an open architecture to manage code and data in NOR and PCM memory devices.
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产品宣传页
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2011/09
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673.02 KB
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产品宣传页
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Flash Data Integrator (FDI) 7.13 User Guide: This document describes how to use the high-level structure, features, functional interfaces, and system requirements of the latest release of the FDI software for Flash memory-based file systems.
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2010/11
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1.32 MB
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G18 Parallel NOR Flash Flyer: Our G18 parallel NOR Flash line of purpose-built MLC embedded memory solutions offers high burst read speeds, fast write speeds, and a wide density range, coupled with low power consumption, flexible architecture, and OTP.
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产品宣传页
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2011/05
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571.63 KB
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产品宣传页
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Industrial and Multi-Market Applications Flyer: 我们拥有广泛而稳定的 IMM 式存储解决方案,有助于推动汽车、工业、医疗、制造业和其它多类细分市场的技术发展。
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产品宣传页
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2011/08
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593.95 KB
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产品宣传页
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Compatibility Guide for Micron Software Device Drivers Available on micron.com: This document lists the compatible NOR, NAND, and PCM devices for the software device drivers available for download from micron.com.
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产品宣传页
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2012/02
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227.69 KB
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产品宣传页
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Parallel NOR Flash Flyer: Today's applications demand an unprecedented combination of features—high performance, high density, high reliability, and low power consumption.Strike a balance between design requirements and cost with our reliable, high-performance parallel NOR.
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产品宣传页
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2012/02
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521.44 KB
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产品宣传页
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Bypass Capacitor Selection for High-Speed Designs: 描述了高速设计的旁路电容选择。
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TN-00-06
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2011/03
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481.9 KB
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Enabling a Flash Memory Device into the Linux MTD: The technical note introduces the Linux memory technology device (MTD) architecture and provides a basis for understanding how to enable new devices and new features into the Linux MTD.
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TN-00-25
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2011/05
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528.81 KB
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Password Protecting Flash Memory Blocks: This document describes a method of password protecting blocks using Micron's M29EW device as an example.
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TN-12-05
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2011/03
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404.22 KB
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Adapting the Linux Kernel for Micron® P30, P33, and J3 Flash Memory: This technical note provides a guide for modifying the MTD device-layer software for correct use with Micron P30, P33, and J3 devices.It also describes the modifications required in the Linux environment.
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TN-12-06
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2011/10
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304.48 KB
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Patching the Linux Kernel and U-Boot for Micron® M29 Flash Memory: This technical note provides a guide for modifying the memory technology device (MTD) layer software for the purpose of correctly using Micron® M29 family Flash memory devices in a Linux environment.This document also describes the modifications required to make a Linux environment work with M29 Flash memory devices.
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TN-13-07
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2011/04
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551.89 KB
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Micron Flash Data Integrator (FDI):Enabling the Second-Source Low-Level Driver: The Micron Flash Data Integrator (FDI) low-level driver is the interface between the FDI software and the hardware Flash memory component.This document provides details for porting a second-source device into the FDI low-level driver.
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TN-13-08
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2010/11
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670.15 KB
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Micron Flash Data Integrator (FDI) Support for Java Applications: An instructional reference to customers of Micron's Flash Data Integrator (FDI).An OEM or ODM utilizing FDI in their design would use this application note to construct a comprehensive Java-enabled cellular/embedded system.
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TN-13-09
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2010/11
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1.52 MB
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Software Drivers for M29W320DB and M29W320DT NOR Flash Memory: This technical note provides library source code in C for M29W320DB and M29W320DT parallel NOR Flash memory.
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TN-13-10
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2010/11
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197.47 KB
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Software Driver for M29AW NOR Flash Memory: This technical note describes the library source code in C for the Micron M29AW parallel NOR Flash memory device using the Flash device driver software interface V3.
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TN-13-11
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2011/04
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242.67 KB
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Software Driver for M29EW NOR Flash Memory: This technical note describes the C library source code for the Micron M29EW parallel NOR Flash memory device using the Flash device driver software interface V3.
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TN-13-12
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2010/11
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279.15 KB
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Software Device Drivers for Micron M29Fxx NOR Flash Memory: This technical note provides C library source code for the M29Fxx Flash memory using the Flash software device driver interface.
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TN-13-13
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2010/11
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256.02 KB
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Software Device Drivers for Micron® M29W256 NOR Flash Memory: This technical note describes the library source code in C for the M29W256 Flash memory device using the Flash software device driver interface.
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TN-13-14
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2011/03
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282.92 KB
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Software Device Drivers for G18 and M18 Family Parallel NOR Flash: This technical note describes the library source code in C for G18 and M18 family parallel NOR Flash memory devices.
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TN-13-19
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2012/04
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358.49 KB
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