移动 LPDRAM

移动 LPDRAM

在低能耗的应用中优化性能

为您的功能丰富的高级设计提供所需的低功耗与高性能。

Mobile Computing全面了解移动 LPDRAM 

消费者希望他们的移动设备具有更多特性与功能,期待您能够设计出耗时更少、占用空间更小、更加节能的移动设备。我们深知您在设备设计中所面临的挑战,因此,为帮助您达到消费者的要求,我们为您提供了一系列移动设备低功耗的 DRAM 零件。我们的移动 LPDRAM 具有能耗低、性能高并且适用温度范围广的特性,方便您为顾客提供更灵活、更长电池寿命的产品。

移动 LPDRAM 料件目录和文档

引人注目的节能能力
我们生产的移动 LPDRAM 在保证性能不受影响的前提下实现更低耗能。其使用一个 JEDEC 标准 1.8V I/O 的 供电电源(LPDDR2 使用 1.2V),这种电源具有低待机电流和低自我刷新电流特性,从而延长电池使用寿命。为进一步节约功耗,移动 LPDRAM 采用更低的 Idd 电压,而且,我们同时提供芯片集成 TCSR 和 PASR 模式,这样可以确保您在不需要使用电池时也无需将电池电量用完。

最快的移动 LPDRAM 的设计
我们的移动 LPDDR 率先将最大时钟速度提升至 200 MHz,从而实现了 400 Mb/s 的超快传输速度,目前的 LPDDR2-1066 零件将这一速度又向前推进了一步,达到了 533 MHz。而且,LPDDR 采用低功耗的 1.2V I/O,这样,您不必降低产品性能,也不会浪费宝贵的电池使用时间。

特点 优势
密度 64Mb to 512Mb (LPSDR)
128Mb to 8Gb (LPDDR)
1Gb to 8Gb (LPDDR2)
Provides flexibility for a variety of application designs
配置 x16, x32 (LPSDR/LPDDR)
x16, x32, x64 (LPDDR2) 
Enables the use of fewer components to support wide-bus architectures
Voltage 1.8V (LPSDR/LPDDR)
1.2V (LPDDR2)
Helps reduce power consumption—a key advantage over standard DRAM
时钟频率 Up to 167 MHz (LPSDR)
Up to 200 MHz (LPDDR)
Up to 533 MHz (LPDDR2)
Provides performance comparable to SDR and DDR SDRAM, with the added advantage of power savings
能耗 Refer to data sheet Delivers low power dissipation in standby and active modes, plus special mobile features to reduce power consumption for a more efficient design
Special Features Temperature-compensated self refresh (TCSR) Adjusts refresh timing to minimize power consumption at lower, ambient temperatures
Partial-array self refresh (PASR) Eliminates unnecessary row activations; refreshes 1/1, 1/2, 1/4, 1/8, 1/16 array
Deep-power down (DPD) Provides a low power state when data retention is not required
Programmable drive strength (DS) Enables drive currents to be reduced in point-to-point applications; easily adjusts to full, half, quarter, or eighth, based on memory bus loading
温度范围 0˚C to +70˚C
0˚C to +85˚C
-40˚C to +85˚C
-40˚C to +95˚C
-40˚C to +105˚C
Enables high performance in extreme environments
封装  VFBGA Reduces footprint by up to 40% relative to standard SDR and DDR SDRAM for a smaller, more compact design; supports JEDEC-standard VFBGA pinout
Known good die Supports bare die with edge bond pads for easy stacking in SIP and MCP solutions
POP Saves board space by allowing a Mobile LPDRAM to be stacked on top of a processor so that the two components require only one footprint on the board; contact factory for availability

SoC, SiP, PoP, MCP?Choose the Right Die-Stacking Solution

No one die-stacking technology suits every application.Each offers different benefits in terms of four key design elements:board space, height, performance, and cost.In the 20-minute online presentation titled "Multi-Die Stacking:Choosing the Right Solution," learn the advantages and disadvantages of four popular stacking solutions—SoC, SiP, PoP, and MCP.Let Micron’s experts help you pick the best technology for your application.Click View Now to begin the presentation.

View Now

类型 安全 标题和描述 编号 更新日期 文件大小
IBIS Behavioral Models: 美光多年前就已成为 IBIS 开放论坛的一员,完全支持 IBIS 规范。美光的网站上提供其大部分产品的 IBIS 模型以供下载。 TN-00-07 2009/11 163.98 KB
Thermal Applications: 定义了测量和确保美光零件和模块不超过允许的最高温度的一般方法和标准 TN-00-08 2010/05 252.18 KB
Understanding Quality and Reliability Requirements for Bare Die Applications: 介绍了 Bare Die 应用的质量和可靠性要求 TN-00-14 2009/10 152.83 KB
Recommended Soldering Parameters: 定义了美光科技公司产品的推荐连接技术和参数。 TN-00-15 2007/03 69.09 KB
Uprating of Semiconductors for High-Temperature Applications: 描述了与提升温度有关的问题,以及在制造环境规范之外使用零件和/或系统的相关风险 TN-00-18 2010/05 428.33 KB
Understanding Signal Integrity: 描述了从新产品构思直至产品寿命结束的整个过程中,如何发挥内存设计、测试和验证工具的最大优势 TN-00-20 2009/12 1.52 MB
SEMI Wafer Map Format: 美光采用了经国际半导体设备与材料联盟 (SEMI) 批准的晶圆图文件格式。使用 SEMI 的格式,美光的客户可以放心,因为他们将始终收到规格统一、兼容、可靠的晶圆图文件。 TN-00-21 2009/02 110 KB
Thinning Considerations for Wafer Products: 有关优化晶圆薄化工艺以满足特定客户需求的信息 TN-00-19 2009/10 73.58 KB
Power-Saving Features of Mobile LPDRAM: Addresses the power-saving features and power calculations of low-power Mobile LPDRAM memory TN-46-12 2009/05 255.93 KB
Mobile LPDDR Versus Standard DDR SDRAM: An overview of the functional and mechanical differences between low-power and standard DDR and a description of exclusive features of LPDDR TN-46-15 2007/12 432.44 KB
Interface Design Guide for STMicroelectronics Cartesio Microprocessor: Guidelines for interconnecting the STA2062 dynamic bus controller to two Micron 512Mb Mobile LPDDR devices TN-46-18 2008/08 2.67 MB
Mobile LPDRAM Unterminated Point-to-Point System Design:Layout and Routing Tips: Provides guidance for the development of multilayer board designs TN-46-19 2008/11 552.55 KB
PCN/EOL Systems: 介绍了美光产品的变更通知和寿命终结系统。 CSN-12 2012/04 79.21 KB
Wafer Packaging and Packaging Materials: 提供了有关装运美光产品时使用的各种材料的完整装运和回收信息。 CSN-20 2011/09 776.24 KB
Bare Die SiPs and MCMs: 描述了 Bare Die SiP 和 MCM 的设计考虑因素。 CSN-18 2009/04 151.06 KB
Shipping Quantities: 提供了料件数量表格。 CSN-04 2012/04 472.27 KB
Micron KGD Definitions: 描述了美光 KGD-C1 和 KGD-C2 DRAM 芯片的测试规格和参数 CSN-22 2009/07 65.52 KB
Micron Component and Module Packaging: 解释了美光的封装标签和程序。 CSN-16 2012/02 887.13 KB
ESD Precautions for Die/Wafer Handling and Assembly: 介绍了在工作场所中控制 ESD 的好处,包括提高产量和改善质量与可靠性,最终可以缩减制造成本。 CSN-24 2010/08 119.08 KB
Electronic Data Interchange: 描述了 EDI 传输的装置、协议和联系方式。 CSN-06 2005/09 53.5 KB
RMA Procedures for Packaged Product and Bare Die Devices: 概括介绍了标准的退货授权 (RMA) 程序,以及与 bare die RMA 的对比。 CSN-07 2010/10 82.64 KB
ISO System Management Standards: 描述了 ISO 系统管理标准。 CSN-08 2004/04 39.18 KB
The Future of Memory and Storage: 概述了主存和闪存的发展趋势 2009/12 1.54 MB
DRAM Component Part Numbering System: DDR3/DDR2/DDR/SDR SDRAM、Mobile LPDRAM 和 RLDRAM 零件的料件编号向导 2012/04 36.89 KB
FBGA Date Codes: FBGA 封装零件的日期代码 2005/08 22.36 KB
Moisture Absorption in Plastic Packages: Describes shipping procedures for preventing memory devices from absorbing moisture and recommendations for baking devices exposed to excessive moisture TN-00-01 2010/02 87.26 KB
Accelerate Design Cycles with Simulation Models: 美光会提供必要的工具和指导,以在实际布局前对新设计进行检验。此技术要点讨论了软件模型支持、信号保真性优化和逻辑电路设计。 TN-00-09 2010/02 206.91 KB
Micron Wire-Bonding Techniques: 此技术要点提供了丝焊技术的指导,可用于美光产品的镍钯 (NiPd) 和铝制接合焊盘。 TN-00-22 2010/11 66.13 KB
TN_4622_t69m_t79m_trans_guide: Transition guide for migration from T69M to T79M 2011/06 147.18 KB
Micron BGA Manufacturer's User Guide: 提供相关信息,帮助顾客轻松将最前沿的和传统的美光球栅阵列 (BGA) 封装整合到制造流程中。此指南旨在提供一系列高水平指导,并附有参考手册,其中介绍了封装相关和制造工艺流程的典型做法。 CSN-33 2011/07 353.32 KB
Product Marks/Product and Packaging Labels: 介绍了产品料件的标记,以及产品和封装的标签。 CSN-11 2012/04 724.89 KB
Industrial and Multi-Market Applications Flyer: 我们拥有广泛而稳定的 IMM 式存储解决方案,有助于推动汽车、工业、医疗、制造业和其它多类细分市场的技术发展。 产品宣传页 2011/08 593.95 KB
Mobile LPDRAM Product Flyer: Discusses six key advantages of designing with Micron’s mobile LPDRAM. 产品宣传页 2012/03 510.17 KB
Bypass Capacitor Selection for High-Speed Designs: 描述了高速设计的旁路电容选择。 TN-00-06 2011/03 481.9 KB

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What makes Micron's Mobile LPDRAM unique?
We offer a comprehensive Mobile LPDRAM product portfolio, with a wide range of densities and package options (including JEDEC-standard VFBGA, Known Good Die, and package-on-package).With nearly a decade of Mobile LPDRAM experience, our worldwide technical support team can provide the expertise and assistance you need to get your designs to market faster.
What is the life expectancy of Micron's Mobile LPDRAM products?
We're excited about this fast-growing market.We plan to manufacture Mobile LPDRAM for many years to come and plan to continue to shrink our designs to achieve higher densities.
What is Mobile LPDRAM?
Optimized for products where power consumption is a concern, our low-power Mobile LPDRAM devices combine leading-edge technologies and packaging options to meet space requirements and extend battery life.Mobile LPDRAM is available with DDR/SDR interface.
Where are Micron's Mobile LPDRAM products used today?
Our Mobile LPDRAM products are used in a wide variety of applications.The most popular are consumer electronic devices like digital still cameras and MP3 players, as well as mobile phones and PDAs.Automotive, medical, and military companies, which are very stringent on quality and reliability, use Mobile LPDRAM to take advantage of the wide industrial temperature range of –40°C to +105°C, which other memory vendors don’t support.It’s also designed in to a variety of networking applications.
What’s the difference between Mobile DRAM and Mobile LPDRAM?
There is no difference; Mobile DRAM and Mobile LPDRAM are the same product.We opted to add the "LP" prefix to our Mobile DRAM product line to align with the common terminology used throughout the industry and to ensure our customers know at a glance that our Mobile DRAM is a low-power memory device.In addition to the family name change, Mobile DDR SDRAM and Mobile SDR SDRAM are now called Mobile LPDDR and Mobile LPSDR, respectively.Our Web site has been wholly converted to the Mobile LPDRAM naming convention, but because we’re updating our PDFs as they come up for review you may see a few older technical documents that still use the old Mobile DRAM terminology.
What Mobile LPDRAM parts have been validated on the OMAP35x?
Micron works closely with Texas Instruments (TI) to validate and optimize our parts for the OMAP35x processors.As we work with the OMAP35x team, the list of validated memory devices expands frequently.For the most current information, contact your local Micron support, or contact Micron Product Sales Support.
Do you recommend a x8, x16, or x32 configuration for mobile applications?
Mobile LPDRAM is offered in x16, x32, and x64.To make the best Mobile LPDRAM choice, consider the application, bandwidth/throughput, physical space on the PCB, and power consumption.
Are your Mobile LPDRAM parts JEDEC-compliant?
We design our parts to meet or exceed the JEDEC specification.As standards change, we will make the necessary changes to ensure our parts meet new specifications.Any changes made will be noted in a product change notice (PCN) and sent to our customers.
Are Micron's Mobile LPDRAM products green/RoHS compliant?
Yes. Micron’s green engineering program is RoHS-compliant and conforms with most of the world’s emerging environmental standards, including those in Asia and Europe.
The part I was using is obsolete and the replacement is a faster speed grade.Can I run the Mobile LPDRAM parts at a lower speed?
Yes. A Mobile LPDRAM part can be run at any speed equal to or slower than its rated speed grade.
Is Mobile LPDRAM a growing market?
Absolutely.iSuppli estimates that the market for Mobile LPDRAM is growing rapidly, with a CAGR of 21.2% from 2006 to 2011.We’re continuing to develop advanced Mobile LPDRAM solutions to meet this growing market.
Does Micron's Mobile LPDRAM cost more than standard DRAM?
It depends.Density plays a major role in price comparisons between Mobile LPDRAM and standard SDR/DDR.Also, since Mobile LPDRAM is offered in standard configurations of x16, x32 and x64, you may be able to reduce your overall BOM cost if your application currently uses two x16 components to support a x32 bus.You could use one x32 Mobile LPDRAM instead of two x16 standard DRAM.Contact your local rep for cost information.