Award-Winning Engineering Innovation
Micron leads the industry in developing the designs and processes that consistently deliver market-driven solutions, providing greater capacity in smaller designs without sacrificing quality and performance.
20 纳米 NAND：2011 Semiconductor of the Year
Our industry-leading 20nm NAND is acknowledged for its superior design, right down to the memory cell.UBM TechInsights named it as 2011 Semiconductor of the Year after extensive review —including examination of the device at the package and die levels and analysis of the process technology, memory cell configuration, and materials identification.
Our award-winning 20nm NAND technology has enabled our groundbreaking 128Gb MLC device, which sets a benchmark in storage silicon.This part provides a terabit of storage in a single eight-die package, doubling the storage capacity of our existing 20nm 64Gb NAND device.Its smaller footprint frees up more board space for other critical mobile components such as screen, battery, or even more storage, and meets increasing demand for more local storage in consumer mobile devices.
Smaller and Better
Process shrinks require tinier, more complex cells, which translates to lower performance and endurance.但是，我们使用 20 纳米 NAND 开发出了创新性的技术。利用这一技术，我们的 20 纳米 NAND 还与上一代（25 纳米）NAND 具有相同的耐用性和性能，不仅能够提供更好的产品，还为 NAND 技术开创了可持续发展的未来道路。
始终在 NAND 创新方面保持领导地位
20 纳米 NAND 的推出巩固了我们在 NAND 发展领域的技术领导地位。以表显示了 NAND 开发人员的创新进度。自从 2005 年建立合资公司 IM 闪存科技 (IMFT) 以来，美光和英特尔几乎每 18 月就会实施流程简化，这远远超越了其他竞争对手。由于我们更早地实现了各个阶段目标，我们也为进一步改进这些技术做好了充足准备，以便将它们用于一些有较高要求的 SSD 和服务器等应用中。
为什么 NAND 简化流程如此重要？
The growth in data storage, combined with new tablet and smart phone features, is demanding more from NAND Flash technology, especially for higher capacities in increasingly smaller designs.而 20 纳米 NAND 降低了存储的占用空间，提供了更多的额外空间用于满足产品的新改进，如：增加电池容量、扩大屏幕尺寸或增加芯片数量来支持新功能。
Measuring just 118mm2, our 64Gb 20nm NAND was the first 8GB MLC (two bits per cell) device that fit into a microSD™ form factor, providing high-capacity, small-form-factor storage for saving music, video, e-books, and other data on mobile devices like smart phones and tablets.
Our new 128Gb MLC NAND device provides the highest storage capacity of any single die on the market, enabling more storage for portable devices.
专利领跑者
几年来，美光一直位居美国获得专利数最多的前 10 家企业。不过，这些专利技术的质量才是我们真正看重的，也是我们真正出类拔萃的地方。In October 2011, the Patent Board ranked Micron’s patents first in science strength for the second consecutive year.Our patent portfolio also ranked fifth in technology strength among all semiconductor companies.These high ratings for science and technology strength underscore our emphasis on the spirit of innovation that has yielded one of the most valuable patent portfolios in the world.正是这项附加价值让我们领先于其他几家规模更大的公司，而他们当年所获得的专利数其实比我们更多。
我们在工艺进步上所获得的奖项，是业内一些最优秀的科学家和工程师多年从事研发工作的见证。这些创新是我们的核心优势，将继续推进我们的公司实现更高效率，让我们处于更强有力的竞争地位。
关于美光的创新博客
若要观看视频并了解前瞻性设计探讨，请访问我们的创新博客。Our blog highlights recent technology developments—from advanced storage solutions to the cutting edge of server, computing, and mobile memory.